? 2011 ixys all rights reserved 1 - 7 20110307b gmm 3x180-004x2 ixys reserves the right to change limits, test conditions and dimensions. v dss = 40 v i d25 = 180 a r dson typ. = 1.9 mw three phase full bridge with trench mosfets in dcb isolated high current package applications ac drives ? in automobiles - electric power steering - starter generator ? in industrial vehicles - propulsion drives - fork lift drives ? in battery supplied equipment features ? mosfets in trench technology: - low r dson - optimized intrinsic reverse diode ? package: - high level of integration - high current capability - aux. terminals for mosfet control - terminals for soldering or welding connections - isolated dcb ceramic base plate with optimized heat transfer ? space and weight savings mosfets symbol conditions maximum ratings v dss t vj = 25c to 150c 40 v v gs 20 v i d25 i d90 i d110 t c = 25c t c = 90c t c = 110c 180 136 120 a a a i f25 i f90 i f110 t c = 25c (diode) t c = 90c (diode) t c = 110c (diode) 182 112 88 a a a s2 l3 g2 s1 g1 s3 g3 s4 g4 s5 g5 s6 g6 l3+ l2 l1 l1+ l2+ l3- l1- l2- symbol conditions characteristic values (t vj = 25 c, unless otherwise specifed) min. typ. max. r dson 1) on chip level at t vj = 25c v gs = 10 v t vj = 125c 1.9 2.8 2.5 5.3 mw mw v gs(th) v ds = 20 v; i d = 1 ma 2.5 4.5 v i dss v ds = v dss ; v gs = 0 v t vj = 25c t vj = 125c 50 5 a a i gss v gs = 20 v; v ds = 0 v 0.2 a q g q gs q gd v gs = 10 v; v ds = 20 v; i d = 100 a 110 33 30 nc nc nc t d(on) t r t d(off) t f inductive load v gs = +10/0 v; v ds = 15 v i d = 135 a; r g = 39 ?; t j = 125c 150 240 350 170 ns ns ns ns e on e off e recoff 0.12 0.51 0.003 mj mj mj r thjc r thjh with heat transfer paste (ixys test setup) 1.3 1.0 1.6 k/w k/w 1) v ds = i d (r ds(on) + r pin to chip ) preliminary data
? 2011 ixys all rights reserved 2 - 7 20110307b gmm 3x180-004x2 ixys reserves the right to change limits, test conditions and dimensions. component symbol conditions maximum ratings i rms per pin in main current paths (p+, n-, l1, l2, l3) may be additionally limited by external connections 2 pins for output l1, l2, l3 75 a t j t stg -55...+175 -55...+125 c c v isol i isol < 1 ma, 50/60 hz, f = 1 minute 1000 v~ f c mounting force with clip 50 - 250 n symbol conditions characteristic values min. typ. max. r pin to chip 1) l+ to l1/l2/l3 or l- to l1/l2/l3 0.9 mw c p coupling capacity between shorted pins and back side metallization 160 pf weight 25 g 1) v ds = i d (r ds(on) + r pin to chip ) source-drain diode symbol conditions characteristic values (t j = 25c, unless otherwise specifed) min. typ. max. v sd (diode) i f = 100 a; v gs = 0 v 0.9 1.2 v t rr q rm i rm i f = 100 a; -di f /dt = 600 a/s v r = 15 v; t j = 125c 38 0.31 14 ns c a
? 2011 ixys all rights reserved 3 - 7 20110307b gmm 3x180-004x2 ixys reserves the right to change limits, test conditions and dimensions. leads ordering part name & packing unit marking part marking delivering mode base qty. ordering code smd standard gmm 3x180-004x2 - smd gmm 3x180-004x2 blister 28 509042
? 2011 ixys all rights reserved 4 - 7 20110307b gmm 3x180-004x2 ixys reserves the right to change limits, test conditions and dimensions.
? 2011 ixys all rights reserved 5 - 7 20110307b gmm 3x180-004x2 ixys reserves the right to change limits, test conditions and dimensions. v ds [v] 0 1 2 3 4 i d [a] 0 100 200 300 400 0 1 2 3 4 0 100 200 300 400 t vj [c] -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 v gs [v] 0 1 2 3 4 5 6 7 8 9 i d [a] 0 50 100 150 200 250 300 350 400 6 v 6.5 v 7 v -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 v dss normalized t j [c] 5.5 v 5 v 6.5 v 6 v 5.5 v 5 v r ds(on) normalized 0 100 200 300 400 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 7 v 5 v 5.5 v 6 v 6.5 v t j = 25c v gs = 20 v 15 v 10 v v ds [v] i d [a] v gs = 20 v 15 v 10 v t vj = 25c 7 v i d [a] r ds(on) r ds(on) norm. r ds(on) m r ds(on) norm. v gs = 10 v 15 v 20 v t vj = 125c i dss = 0.25 ma v ds = 16 v v gs = 10 v i d = 135 a t vj = 125c t j = 125c fig. 1 drain source breakdown voltage v dss vs. junction temperature t vj fig. 2 typical transfer characteristic fig. 3 typical output characteristic fig. 4 typical output characteristic fig. 6 typ. drain source on-state resistance r ds(on) versus i d fig. 5 typ. drain source on-state resistance r ds(on) versus junction temperature t j
? 2011 ixys all rights reserved 6 - 7 20110307b gmm 3x180-004x2 ixys reserves the right to change limits, test conditions and dimensions. q g [nc] 0 20 40 60 80 100 120 i d [a] 0 2 4 6 8 10 12 t d(on) t r v gs [v] 0 40 80 120 160 200 0.0 0.1 0.2 0.3 0.4 0 100 200 300 400 0 40 80 120 160 200 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 100 200 300 400 500 600 0 20 40 60 80 100 120 0.0 0.2 0.4 0.6 0.8 1.0 0 100 200 300 400 500 0 20 40 60 80 100 120 0.0 0.2 0.4 0.6 0.8 1.0 0 200 400 600 800 1000 t c [c] 0 25 50 75 100 125 150 175 200 0 20 40 60 80 100 120 140 160 180 200 v ds = 15 v e on e on , e rec(off) [mj] i d [a] i d [a] t [ns] e off t f t d(off) t [ns] t [ns] e on e rec(on) x10 t d(on) t r r g [ ] e off [mj] e off t d(off) t f e off [mj] e on , e rec(on) [mj] t [ns] v ds = 15 v v gs = +10/0 v i d = 135 a t j = 125c r g [ ] v ds = 28 v i d = 135 a t vj = 25c v ds = 15 v v gs = +10/0 v r g = 39 t vj = 125c 10x e rec(off) v ds = 15 v v gs = +10/0 v r g = 39 t vj = 125c v ds = 15 v v gs = +10/0 v i d = 135 a t vj = 125c fig. 7 gate charge characteristics fig. 8 drain current i d vs. temperature t c fig. 9 typ. turn-on energy & switching times vs. collector current, inductive switching fig. 10 typ. turn-off energy & switching times vs. collector current, inductive switching fig. 12 typ. turn-off energy & switching times vs. gate resistor, inductive switching fig. 11 typ. turn-on energy & switching times vs. gate resistor, inductive switching
? 2011 ixys all rights reserved 7 - 7 20110307b gmm 3x180-004x2 ixys reserves the right to change limits, test conditions and dimensions. 200 300 400 500 600 700 800 0 4 8 12 16 20 -di f /dt [a/s] 200 300 400 500 600 700 800 t rr [ns] 32 36 40 44 48 v sd [v] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i s [a] 0 50 100 150 200 250 300 350 400 200 400 600 800 q rr [c] 0.0 0.1 0.2 0.3 0.4 0.5 0.6 t j = -25c 25c 125c 150c t [s] 0.001 0.01 0.1 1 10 z th [k/w] 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 -di f /dt [a/s] i rm [a] v r = 15 v t vj = 125c 50 a 150 a 100 a i f = 50 a 100 a 150 a -di f /dt [a/s] i f = 50 a 100 a 150 a fig. 13 typ. reverse recovery time t rr of the body diodes versus di/dt fig. 14 typ. reverse recovery current i rm of the body diodes versus di/dt fig. 15 typ. reverse recovery charge q rr of the body diodes versus di/dt fig. 16 typ. source current i s versus source drain voltage v sd (body diode) fig. 17 defnition of switching times
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